Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots

摘要

Using 3D k.p calculation including strain and piezoelectricity we predictvariation of electronic and optical properties of InAs/GaAs quantum dots (QDs)with the substrate orientation. The QD transition energies are obtained forhigh index substrates [11k], where k = 1,2,3 and are compared with [001]. Wefind that the QD size in the growth direction determines the degree ofinfluence of the substrate orientation: the flatter the dots, the larger thedifference from the reference [001] case.